- Process Capabilities
Process Capabilities
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- Ion Implanting
- Ion Implanter
- Wafer size: 4, 6, 8, 12 inch and non-standard shaped materials
- Implant energy: 5~210Kev
- Implant dose: 5E11 ~ 1E17 ions/cm²
- Implant angle: Tilt: 0°~60°, Twist: 0°~359°
- Processed wafer types: SiC, Si, LN, LT, Diamond
- Main Function:
- Complete the doping modification of H, P, and He elements through ion implanting.
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- Bonding
- Room - Temperature Bonding Machine
- Wafer Size: 4、6、8 inch
- Wafer Thickness: ＜1000µm
- Alignment Accuracy: X,Y≤70µm、θ≤0.2deg
- Bonding Energy: 1.0-2.0 J/m²
- Processed Wafer Types: 4H-SiC, Poly- SiC, Si, SiO₂, LT, LN, Quartz, Glass, Sapphire, InP, YAG, GaAs,etc.
- Main Function:
- Homogeneous and Heterogeneous Material Bonding
- Hydrophilic/ Hybrid Bonding Machine
- Wafer Size: 6、8 inch
- Wafer Thickness: 6inch≤700µm 8inch≤800µm
- Wafer Thickness: 1.4 - 2.0 J/m²
- Processed Wafer Types: Si, SiO₂, LT, LN, InP, GaAs, SiN,etc.
- Main Function:
- Homogeneous and Heterogeneous Material Bonding
- Thermocompression Anodic Bonding Machine
- Wafer Size: 4, 6, 8, 12 inch
- Wafer Thickness: 0.3 - 3mm
- Alignment Accuracy: ≤ 0.5mm (mechanical alignment), ≤ 2μm (optical alignment)
- Bonding Energy: ≥ 2.0 J/m²
- Processed Material Types: Si, Au, Ag, Cu, AuSn, AlGe, SnAg, AuGe, AuIn, AuSi,etc.
- Main Function:
- Thermocompression bonding of metallic materials, eutectic material bonding, anodic bonding
- Temporary Bonding Machine, Debonding Machine
- Wafer Size: 4, 6, 8, 12 inch
- Wafer Thickness: 0.3 - 3mm
- Processed Wafer Types: Si, SiO₂, Glass, Sapphire, GaAs, InP, etc.
- Debonding Methods: Thermal Sliding (4 - 8 inch), Laser (4 - 12 inch)
- Main Function:
- Temporary bonding and debonding
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- Grinding-based thinning
- Grinding Machine
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: < 2200μm
- Equipment Capability: TTV < 1μm, Ra: Si/LN/LT < 10nm, Ra: SiC < 3nm
- Processed Wafer Source Types: Monocrystalline SiC, Polycrystalline SiC, Si, LN, LT, SiO₂, YAG, SP
- Main Function:
- Remove the excess material on the back of the wafer to effectively reduce the wafer packaging volμme, lower the thermal resistance, and improve the heat - dissipation performance of the device.
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- CMP
- Chemical - Mechanical Polishing
- Wafer Size: 6, 8 inch
- Wafer Thickness: 290 - 1100μm
- Equipment Capability: Roughness < 0.2nm (Polycrystalline SiC roughness < 0.5nm), THK Range < 400A
- Processed Wafer Source Types: Monocrystalline SiC, Polycrystalline SiC, Si, LN, LT, SiO₂ and other composite substrates
- Main Function:
- Flatten the uneven thin - film on the wafer surface, achieving the polishing function of the thin - film.
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- Oxidation
- Oxidation Furnace
- Wafer Size: 6 inch
- Wafer Thickness: 350 - 750μm
- SIO₂ thickness: 0 - 1μm
- Processed Wafer Types: Silicon Wafer
- Main Function:
- Oxidize silicon - based materials
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- Poly-Si
- LPCVD Tube
- Wafer Size: 6 inch
- Wafer Thickness: 500 - 750μm
- Deposition thickness : 0 - 1.3μm
- Processed Wafer Types: Silicon Wafer
- Main Function:
- Grow poly-Si layersof silicon - based materials
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- Trimming
(Ultra - Hard Material Polishing)
- Ultra - Atomic Beam Polishing Equipment
- Wafer Size: ≤ 8 inch and non-standard shaped materials
- Wafer Thickness: < 1000μm
- Equipment Capability: Polishing
- Processed Wafer Types: unlimited
- Main Function:
- Non - destructive polishing of diamond and various materials to reduce roughness
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- Annealing
- Annealing Furnace
- Wafer Size: 6 inch
- Wafer Thickness: < 1350μm
- Equipment Capability: Temperature Range: ≤ 1050°C
- Furnace Atmosphere: N₂, Ar
- Processed Wafer Types: Diamond, Single - crystal SiC, Poly - crystal SiC, SOI and Other Composite Substrates
- Main Function:
- Used for the separation of homogeneous and heterogeneous composite substrate wafers
- Annealing Furnace for Defect Repair
- Wafer Size: 6, 8 inch
- Wafer Thickness: < 1350μm
- Equipment Capability: Temperature Range: ≤ 2000°C
- Furnace Atmosphere: N₂, Ar
- Processed Wafer Types: Diamond, 4H-SiC, Poly-SiC, SOI and Other Composite Substrates
- Main Function:
- Used for processes such as defect elimination, impurity activation, and silicide formation after ion implantation in silicon and compound semiconductor materials
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- Cleaning
- Single-Wafer Cleaning Machine
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: 200 - 2000μm
- Equipment Capability:
- Particle count SIC(@≥0.3μm) ≤ 30ea after cleaning;
- Particle count SI(@≥0.3μm) ≤ 10ea after cleaning;
- Metal content < 5.0E+10 atoms/cm²
- Processed Wafer Types: Si/LT/LN/SiO₂/SiC/Quartz/Multilayer Bonded Wafers
- Main Function:
- Implement the standard single wafer cleaning process: successively remove organic contamination, particle contamination, metal contamination, and the natural oxide layer on the wafer surface.
- RCA Manual Cleaning Machine
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: 200 - 1000μm
- Equipment Capability:
- Particle count SIC(@≥0.3μm) ≤ 200ea after cleaning;
- Particle count SI(@≥0.3μm) ≤ 20ea after cleaning;
- Metal content < 5.0E+10 atoms/cm²
- Processed Wafer Types: Si/LT/LN/SiO₂/SiC/Quartz/Multilayer Bonded Wafers
- Main Function:
- Implement the standard RCA cleaning process: successively remove organic contamination, particle contamination, metal contamination, and the natural oxide layer on the wafer surface.
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- Chamfering
- Micro-Chamfering Machine
- Wafer size: 6, 8 inch
- T-type : Width: ≤3mm, Depth: <700μm
- R-type: Difference in top - bottom amplitude <70μm, Diameter difference <50μm
- Wafer thickness(T-type): <1200μm
- Wafer thickness(R-type): 350-600μm
- Processed wafer types: 4H-SiC, Poly-SiC, Si, SiO₂, YAG, SP
- Main Function:
- R-type and T-type Wafer chamfering operation
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- Testing
- Wafer Defect Inspection Machine
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: 290 - 1000μm
- Equipment Capability: BF&DF&PL Defect Detection for Particles 0.2μm and above
- Processed Wafer Types: Si, SiC, LT, LN, SiO₂ and other composite substrates
- Main Function:
- Detect the defect on the wafer surface
- Thin - Film Thickness Measuring Instrμment
- Wafer Size: Unlimited
- Wafer Thickness: Unlimited
- Equipment Capability: Film thickness range 10nm - 250μm
- Processed Wafer Types: Any material with film - layer structure
- Main Function:
- Detect the film - layer situation of wafers
- Flatness Measuring Instrμment
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: 300 - 1000μm
- Equipment Capability: TTV/LTV/Warp/Bow/THK, etc.
- Processed Wafer Types: Unlimited
- Main Function:
- Detect the Geometric Parameters of wafers
- Atomic Force Microscope (AFM)
- Wafer Size: 4, 6, 8 inch and non-standard shaped materials Wafer Thickness: < 3000μm
- Equipment Capability:
- Minimμm test size: 5μm*5μm;
- Ra < 10nm; Step height < 5μm, Visible step locations are present. Step width range is less than 50 μm.
- Processed Wafer Source Types: Unlimited
- Main Function:
- Obtain the surface morphology of samples by utilizing the relationship of atomic forces between the probe and the sample.
- Ultrasonic Microscope
- Wafer Size: Unlimited
- Wafer Thickness: Unlimited
- Equipment Capability:
- Minimμm resolution: 0.5μm. Output Map and void ratio.
- Processed Wafer Types: Unlimited
- Main Function:
- Used to observe delamination, voids, bubbles, gaps, impurity particles and other defects inside the bonded wafer.
- 3D Hybrid Confocal Scanning Microscope
- Wafer Size: Unlimited
- Wafer Thickness: Unlimited
- Equipment Capability:
- Step height: 5 - 50μm.
- Defect characterization: above 0.3μm.
- Roughness: μm level
- Processed Wafer Types: Unlimited
- Main Function:
- Obtain the 3D surface morphology of the sample, and effectively characterize surface roughness and micro - structure geometric dimensions.
- Inductively Coupled Plasma Mass Spectrometer (ICP - MS)
- Wafer Size: Unlimited
- Wafer Thickness: Unlimited
- Equipment Capability: Measure metals such as Li, B, Na, Mg, Al, K, Ga, Ti, Cr, Ni, Cu, Fe, Zn, Ce; Detection limit is in the ppt level
- Processed Wafer Source Types: Unlimited
- Main Function:
- Detect metallic elements in samples
- Non - Contact Resistivity Meter
- Wafer Size: 2, 4, 6, 8 inch
- Wafer Thickness: 300 - 800μm
- Equipment Capability: Resistance range: 0.035 - 10³ Ω/sq.
- Processed Wafer Types: Si/SiC
- Main Function:
- Detect the resistivity of samples
- Void Infrared Detector
- Wafer Size: 2, 4, 6, 8, 12 inch
- Wafer Thickness: Unlimited
- Equipment Capability: Measure the nμmber and size of voids
- Processed Wafer Types: Si - Si, Si - SiO₂, LT/LN - Si, LT/LN - SiO₂, SiC, etc.
- Main Function:
- Detect the void level of samples
- Four - Probe Sheet Resistance Meter
- Wafer Size: 2, 4, 6, 8, 12 inch
- Wafer Thickness: ≤1mm
- Equipment Capability: Measurement accuracy ≤ 1%.
- Sheet resistance measurement range: 1 mΩ/sq- 8x105Ω/sq
- Processed Wafer Types: PN-junction silicon material
- Main Function:
- Measure the Sheet Resistance of the wafer surface
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- Trim
- Ion Beam Polishing and Etching Machine
- Wafer Size: 4, 6, 8 inch
- Wafer Thickness: 400 - 1000μm
- Equipment Capability: Increase THK sigma by more than 3 times (SiO₂ THK Range < 10Å; LT0I/LN0I range < 100Å; SiC0I range < 1000Å. The range is affected by the previous value of the film - layer material)
- Processed Wafer Types: SOI, SiO₂, SiC composite substrates, LNOI, LTOI and other film - coated materials
- Main Function:
- Etching various thin - film materials and performing film - thickness adjustment
