The SiCOI (Silicon Carbide-on-Insulator) composite wafer leverages a proprietary fabrication process to fully exploit the intrinsic properties of HPSI (High-Purity Semi-Insulating) SiC material, significantly enhancing the overall performance of semiconductor devices (e.g., high Q-factor). Its outstanding optical properties find critical applications in second harmonic generation, electro-optic modulators, optical frequency combs, photonic integrated circuits (PIC), and more.