6寸SiC单晶-单晶复合衬底
- Items
- Specification
- Diameter
- 150±0.2mm
- Poly type
- 4H
- Dopant
- n-type /Nitrogen
- Resistivity
- 0.015-0.025ohm·cm
- Face Orientation
- 4.0° off-axis towards <11-20>±0.5°
- Transfer layer Thickness
- ≥0.5μm
-
Void(Size: ≥5mm)
Void(Size: 1 ~ 5mm)
Void(Size: 0.5~1mm)
-
0ea/wafer
≤3ea/wafer
≤5ea/wafer
- Front (Si-face) roughness
- Ra≤0.2nm (5μm*5μm）
- Edge Chip,Scratch,Crack（visual inspection）
- None
- TTV
- ≤5μm
- Warp
- ≤50μm
- Thickness
- 350±25μm
8寸SiC单晶-单晶复合衬底
- Items
- Specification
- Diameter
- 200±0.2mm
- Poly type
- 4H
- Dopant
- n-type /Nitrogen
- Resistivity
- 0.015-0.025ohm·cm
- Face Orientation
- 4.0° off-axis towards <11-20>±0.5°
- Transfer layer Thickness
- ≥0.5μm
-
Void(Size: ≥5mm)
Void(Size: 1 ~ 5mm)
Void(Size: 0.5~1mm)
-
0 ea/wafer
≤6ea/wafer
≤10ea/wafer
- Front (Si-face) roughness
- Ra≤0.2nm (5μm*5μm）
- Edge Chip,Scratch,Crack（visual inspection）
- None
- TTV
- ≤7μm
- Warp
- ≤50μm
- Thickness
- 500±25μm
