SiCOI衬底
- Items
- Specification
- Diameter
- 150±0.2mm
- SiC Polytype
- 4H
- SiC Resistivity
- ≥1E8ohm ·cm
- SiC Mean Thickness (21 Pts)
- ≥0.5um
- SiC Thickness Range
- ≤2000A
- Front (C-face) roughness
-
Ra≤0.2nm
(5μm*5μm)
- Oxide thickness
- (0~3000) ±5% nm
- SI Orientation
- <111>/<100>/<110>等
- Si Type
- P/N
- 定位边
- Flat/Notch
-
Edge Chip,Scratch,Crack
(visual inspection) - None
- 总厚度变化TTV
- ≤5μm
- 总厚度Thickness
- 500/625/675±25μm
