Si on SiC复合衬底
- Items
- Specification
- Diameter
- 150±0.2mm
- SiC Polytype
- 4H
- Sl Orientation
- <111>/<100>/<110>等
- SiC Resistivity
- 0.015-0.025/≥1E8ohm ·cm
- Si Type
- P/N
- 定位边
- Flat/Notch
-
Edge Chip,Scratch,Crack
(visual inspection) - None
- Transfer Si layer Thickness
- ≥0.1μm
- TTV
- ≤5μm
- Front roughness
-
Ra≤0.2nm
(5μm*5μm)
- Thickness
- 350/500±25μm
